| PART |
Description |
Maker |
| K9K2G08U0M K9K2G08U0M-YCB0 K9K2G16U0M-PCB0 K9K2G16 |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MC-4R256FKE8D-840 |
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16 |
64MB & 128MB SmartMediaTM Card
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MR26V01G53L |
64M-Word x 16-Bit or 128M-Word x 8-Bit Page Mode P2ROM
|
List of Unclassifed Man...
|
| MBM29QM12DH-60 MBM29QM12DH60 MBM29QM12DH60PBT MBM2 |
128M (8M X 16) BIT
|
Fujitsu Microelectronics
|
| PD45128163-SU PD45128163G5-A75SU-9JF PD45128163G5- |
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) 128兆位同步DRAM 4银行，LVTTL水树（宽温度范围
|
Elpida Memory, Inc.
|
| MX23J25640 MX23J25640TI-50G MX23J25640TC-50 MX23J2 |
256M-BIT NAND INTERFACE XtraROMTM
|
MXIC
MCNIX[Macronix International]
|
| UPD23C128040BLGY-MKH UPD23C128040BLGY-MJH UPD23C12 |
128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
(UPD23C128040BL / UPD23C128080BL) 128M-BIT MASK-PROGRAMMABLE ROM
; Connector Type A:DB37 Male; Connector Type B:DB37 Female; Cable Length:5ft; Approval Bodies:UL; Approval Categories:UL Style 2464 (300V 80 deg C -- cable only); Color:Chrome; For Use With:RS-449 Applications RoHS Compliant: Yes
Multiconductor Cable; Number of Conductors:2; Conductor Size AWG:12; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper; Jacket Color:Red RoHS Compliant: Yes
|
NEC Corp.
|
| MX25L25639FZ4W08G |
3V 256M-BIT [x 1/x 4] CMOS MXSMIO? (SERIAL MULTI I/O)
|
Macronix International
|
| HYB25DC256160C |
(HYB25DC256160C / HYB25DC256800C) 256M-Bit DDR SDRAM
|
Infineon Technologies Corporation
|
